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CMOS Noise Analysis and Simulation from Low Frequency and Baseband to RF and Millimeter Wave.

IEEE access(2023)

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摘要
Generic guidelines for noise simulation of CMOS integrated circuits and advanced noise signal integrity analyses, were addressed in this work. The provided noise simulation guidelines are referring to a wide application spectrum, from baseband designs to high frequency RF/mmWave applications. Linear, periodic state and non-linear circuits, were used to categorize the noise simulation guidelines to the respective topology in which they can be applied. In addition, thermal, flicker and gate induced noise, were addressed, and classified with respect to the application field. Three test case vehicles were designed, each vehicle corresponds to a linear, periodic state or text non-linear circuit topology. As a linear vehicle, an Operational Transconductance Amplifier (OTA) was designed, as a periodic state vehicle, a Voltage Controlled Oscillator (VCO) was designed while as a non-linear vehicle, a DC-to-DC Boost Converter was designed. Small-signal and large-signal noise analyses were benchmarked in terms of simulation time, compatibility and obtained accuracy. As small-signal analyses, AC noise, PNOISE and ENVLP analyses were performed, whereas as large-signal analyses, direct time domain (TRAN), PSS and QPSS analyses were performed in the respective topologies. Furthermore, using as a victim the VCO test case circuit, noise interference due to mutual coupling (mixing interference) was thoroughly addressed and simulation compatibility check was presented. Finally, noise simulation guidelines were efficiently summarized and categorized with respect to the circuit type and the application field.
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关键词
Integrated circuit modeling,Topology,Semiconductor device modeling,Analytical models,1f noise,White noise,Transient analysis,Integrated circuits,noise simulation,signal integrity,linear circuits,periodic state circuits,non-linear circuits,noise simulation guidelines
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