Influences of the inhomogeneity of the ferroelectric thin films on switching current

This work examined the development of the transient current of a ferroelectric thin film such as (Hf,Zr)O 2 , Pb(Zr,Ti)O 3 , and (Al,Sc)N to clarify the origin of the decrease in transient current during switching. Toward this end, the measured transient switching current of the ferroelectric capacitor was simulated while considering the coercive voltage distribution across the capacitor area. Furthermore, to understand how the non-ferroelectric interfacial layer behaved, the Al 2 O 3 capacitor was serially connected to the ferroelectric capacitors. The coercive voltage distribution of the ferroelectric layer determined the slope of the current plateau, and the non-ferroelectric layer behaved like resistance during switching. Graphical abstract