High-performance Photodetection Sensors Based on (s2ge)100−x(s3sb2)x (x = 15, 30, 45, 60) System for Optoelectronics Applications

The global scientific community has been paying close attention to the development of a highly responsive and cost-effective photodetection system. This research presents a simple, easy-to-process, and cost-effective synthesis approach for the creation of a Ge-Sb-S nanomaterial. Different characterization technologies were used to characterize the prepared samples. The amorphous nature of the produced Ge-Sb-S nanostructures is revealed by XRD patterns, and surface morphological investigations are carried out using scanning electron microscopy (SEM). Under a 50 µW/cm2 illumination intensity, photodetector performance parameters such as responsivity (R), external quantum efficiency (EQE), and detectivity (D) were investigated. The fabricated photodetector device of the material (GeS2)40(Sb2S3)60 shows the highest responsivity, EQE, and detectivity of 3.08 A/W, 1044.98