Simulation research on single event effect of N-well resistor br

In this paper, the single event effect of N-well resistor is simulated by using the technology computer aideddesign (TCAD) software. The results indicate that a single heavy ion incident into the N-well resistor will makea disturbance in the output current of the device. The working mechanism of the N-well resistor and thephysical mechanism introduced by the single event effect are studied. The results show that ion-inducedelectron-hole pairs neutralize the depletion region in the N-well substance that provides high impedance for thedevice, resulting in the instantaneous increase of the output current. The larger the destroyed area of thedepletion region in the N-well resistor, the higher the peak value of the transient output current is. But the ion-induced disturbance can disappear with the collection of the high concentration of excess carriers in the N-wellstructure. However, the unique aspect ratio design of the N-well resistor makes only the carriers close to theinput drift to output under the electric field. And, the drift motion of carriers takes a lot of time because of thelong transport distance, which leads to low efficiency of collecting excess carriers and a long duration of ion-induced disturbance in the N-well resistor. Besides, some other factors that can affect the single event effect inthe N-well resistors are also studied in this paper. The results show that the higher the LET value of ions andthe farther the incident location from the input, the more serious the single event effect of N-well resistance is.In addition, properly shortening the length of the N-well resistor and increasing the input voltage of the N-wellresistor can enhance its resistance to single event effect.