1200 V 14 m Omega SiC MOSFET with Low Specific On-Resistance of 3.3 m Omega cm(2)

Benefitted from the high switching frequency, knee-free driving voltage, and a natural reverse recovery body diode, SiC MOSFETs are regarded as the most potential candidate to take place of Si IGBT in 600V-3300V power applications. Pursuing lower specific on-resistance (R-sp,R-on) at certain rated voltages is the critical aim for more advanced devices with smaller size and higher efficiency. Here, we represent a successful design and fabrication of 1200V/14m Omega 4H-SiC MOSFET with ultra-low specific on-resistances of 3.3 m Omega cm(2) at 25 degrees C and 6.4 m Omega cm(2) at 150 degrees C, showing a desired positive resistance temperature coefficient. A detailed analysis has been made with respect to the static and dynamic characteristics, third quadrant conduction, and body diode, etc.