A Near-Infrared Enhanced Field-Line Crowding Based CMOS-Integrated Avalanche Photodiode

This paper presents a CMOS-integrated linear-mode avalanche photodiode based on electric field-line crowding (EFLC-APD) to form an effective multiplication zone and a wide absorption zone. The EFLC-APD possesses a hemispherical avalanching electric field at the n-well/p- epi junction formed due to the curvature of the half-sphere cathode. A lower electric field extends radially across the entire volume of the EFLC-APD towards the substrate and towards the surface anode. Because of such a distribution of the electric field, electrons photogenerated within the whole volume drift towards the cathode. Therefore, the EFLC-APD provides a large sensitive-area to total-area ratio while offering high responsivity and bandwidth for red and near-infrared light due to its thick absorption zone and drift-based carrier transport. It is shown that the electric field distribution can be modified by the design parameters such as cathode radius and diode size in addition to doping profiles. The EFLC-APD achieves a responsivity-bandwidth (R-BW) product of 49.5 $\frac{\mathrm{A}}{\mathrm{W}}\cdot$ GHz, corresponding to the responsivity and bandwidth of 33 A/W and 1.5 GHz, respectively, at the wavelength of 850 nm. In addition, a maximum responsivity of 3.05 $\times\, 10^{\mathrm{3}}$ A/W at 2 nW optical power is achieved for the red and near-infrared spectral range. Noise characterization resulted in an excess noise factor F = 6 measured at an avalanche gain of 56.7. Due to the high sensitive-area to total-area ratio, high responsivity, large bandwidth, and CMOS compatibility, this APD is a promising optical detector for many applications.