Efficient Ohmic Contact in Monolayer CrX ₂ N ₄ (X = C, Si) Based Field‐Effect Transistors (Adv. Electron. Mater. 3/2023)

Yu Shu,Yongqian Liu,Zhou Cui,Rui Xiong,Yinggan Zhang,Chao Xu,Jingying Zheng,Cuilian Wen,Bo Wu,Baisheng Sa

Advanced Electronic Materials（2023）

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摘要

Metal–Semiconductor Contacts In article number 2201056, Baisheng Sa and co-workers report the achievement of Ohmic and quasi-Ohmic contact in CrX2N4 (X = C, Si) contacts, which is due to Fermi level pinning effects. Thereby, channels are provided for electrons to pass through linked field-effect transistors easily. This system is analogous to high-speed trains going through mountain tunnels without climbing the peaks.

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efficient ohmic contact,monolayer crx,field‐effect transistors,electron

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Efficient Ohmic Contact in Monolayer CrX 2 N 4 (X = C, Si) Based Field‐Effect Transistors (Adv. Electron. Mater. 3/2023)

Efficient Ohmic Contact in Monolayer CrX ₂ N ₄ (X = C, Si) Based Field‐Effect Transistors (Adv. Electron. Mater. 3/2023)