InGaN/GaN Short-Period Superlattices in Nanowires for Developing Efficient Red Submicron LEDs
2022 IEEE Photonics Conference (IPC)(2022)
摘要
Red emission is achieved from nanowires grown with an InGaN/GaN short-period superlattice. Submicron scale LEDs, with area 0.75 μm × 0.75 μm fabricated on them exhibit peak external quantum efficiency of 2.2%, the highest value ever reported for a submicron red LED.
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关键词
efficient red submicron leds,nanowires,ingan/gan,short-period
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