Design consideration of ferroelectric field-effect-transistors with metal–ferroelectric–metal capacitor for ternary content addressable memory

Boram Yi,Junghyeon Hwang,Tae Woo Oh,Sanghun Jeon,Seong-Ook Jung,Ji-Woon Yang

SSRN Electronic Journal（2023）

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摘要

•The optimization of the MFM capacitor of the FeFET was performed to enhance the performance of the FeFET-based TCAM.•The performance of FeFET-based TCAM according to polarization properties of ferroelectric material was investigated.•The results can provide directions for developing ferroelectric materials.

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关键词

Compact model, Ferroelectric FET, Logic-in-memory, Non-volatile logic, Non-volatile memory, TCAM

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