Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice

A. V. Babichev, E. V. Pirogov, M. S. Sobolev,D. V. Denisov, H. A. Fominykh,A. I. Baranov, A. S. Gudovskikh, I. A. Melnichenko, P. A. Yunin, V. N. Nevedomsky, M. V. Tokarev,B. Ya. Ber, A. G. Gladyshev,L. Ya. Karachinsky, I. I. Novikov,A. Yu. Egorov

Semiconductors（2024）

引用 0|浏览3

暂无评分

摘要

The results of a study of nitrogen-containing active regions based on superlattices grown on GaAs substrates are presented. Active regions based on alternating InAs and GaAsN layers were fabricated by molecular-beam epitaxy using a nitrogen plasma source. Based on the XRD analysis, the thicknesses and average composition of superlattice layers are estimated. The study of dark-field images obtained by transmission electron microscopy showed the presence of interdiffusion of InAs into GaAsN. The results of a study of the photoluminescence and electroluminescence spectra at different pump levels are presented. Efficient electroluminescence is demonstrated near 1150 nm with a full width at half-maximum of about 90 meV.

查看译文

关键词

Superlattices,molecular beam epitaxy,gallium arsenide,dilute nitride,GaAsN,InAs

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要