Role of nanocrystal incrustation in the electrical conductivity of pm-SiGe:H thin films at room temperature

Carlos Ascencio-Hurtado,Roberto Ambrosio,Alfonso Torres,Mario Moreno,Arturo Ponce,Filiberto Candia-García,Alba Arenas-Hernández

SSRN Electronic Journal（2023）

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摘要

•pm-SiGe:H nanocomposite deposited by low-frequency PECVD.•Embedded nanocrystals (around 4 nm) in SiGe amorphous matrix were obtained.•Nanoparticles enhanced seven orders of magnitude the electrical conductivity.•Hydrogen dilution and Ge content plays an essential role in PECVD deposition.

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关键词

Polymorphous silicon–germanium,PECVD,Nanocomposite,Topographical contrast method

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