Ultra-Wide bandgap Quasi Two-Dimensional β-Ga2O3 with highly In-Plane anisotropy for power electronics

•Quasi-2D UID Ga2O3 exhibits a weakly anisotropic in-plane electrical property (mobilitymax/min ∼ 1.4), whereas Quasi-2D doping Ga2O3 shows a large anisotropic electronic (σmax/min ∼ 5.7) and photoelectrical (Rmax/min ∼ 5.1 at 254 nm) features, showing the potential for future anisotropic devices.•Quasi-2D Ga2O3 shows a polarization-dependent anisotropic Raman response in a period of 180°, especially, in which the A10 mode reveals the anisotropic ratio of 12.7.•Based on the Ab initio calculations, more charges would transfer between Ga and O atoms along [001] than [010] axis orientation, which may contribute to the highly in-plane anisotropy in Quasi-2D Ga2O3.