$\boldsymbol{125^{\mathrm{o}}\mathrm{C}}$ CW Operation of $\boldsymbol{1.2-1.3 \mu \mathrm{m}}$ Wavelength GaAs-based Lasers with Type-II (GaIn)As/Ga(AsSb)/(GaIn)As-“W”-Quantum Well
2022 28th International Semiconductor Laser Conference (ISLC)(2022)
摘要
The GaAs-based Type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum-well structure has the possibility for the efficient and thermally stable operation as 1.2-1.3
$\mu \mathrm{m}$
wavelength lasers. In this work, we demonstrate
$125^{\circ}\mathrm{C}$
CW lasing operation from ridge-waveguide lasers and the reduction of a lasing wavelength shift depending on temperature which is obtained using the band configuration with the type-II “W”-quantum-well structure.
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关键词
(GaIn)As-Ga(AsSb)-(GaIn)As/int,band configuration,CCW lasing operation,GaAs-based lasers,lasing wavelength shift,ridge-waveguide lasers,thermally stable operation,type-II W-quantum well structure,wavelength 1.2 mum to 1.3 mum,wavelength lasers
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