Comparing Metal Assisted Chemical Etching of N and P-Type Silicon Nanostructures

Hanna Ohlin,Thomas Frisk, Ilya Sychugov,Ulrich Vogt

SSRN Electronic Journal（2023）

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摘要

•For Metal-assisted chemical etching (MACE) of nanostructures, P and N-type silicon are viable options.•Resulting porosity is found to be local to the topmost layer of the etched structures.•Results suggest previously known mechanisms for MACE might be more complicated than first thought.

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silicon,p-type

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