415/610GHz f_T/f_MAX SiGe HBTs Integrated in a 45nm PDSOI BiCMOS process

High Performance (HP) SiGe HBTs integrated in a 45nm PDSOI BiCMOS process with peak $f_{T}/f_{MAX}415/610$ GHz are reported here. These are the highest f MAX silicon devices demonstrated in any SOI platform. Measured $f_{T}/f_{MAX}$ at transmission line metal level for this HBT is 388/600GHz which gives significant performance benefit over CMOS in RF circuit designs. HBTs are integrated in a hybrid region on the wafer formed by removing the SOI and BOX with an epitaxial growth and planarization to form a co-planar top surface with the SOI. In addition to the HP HBTs and CMOS, the process also integrates a medium breakdown HBT with $f_{T}/BV_{CBO} =270$ GHz/5.6V and RF N/P FETs with $f_{T}/f_{MAX} =270/355$ GHz and 240/295 GHz. An early CML RO design has a gate delay of 1.76ps. Simple cascode power cells show > 23 dB gain at 70GHz and > 18 dB gain at 100GHz.