SiC Three-Level Neutral-Point-Clamped Converter With Clamping Diode Volume Reduction Using Quasi-Two-Level Operation

IEEE Transactions on Power Electronics（2023）

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摘要

Medium voltage SiC mosfet s have recently garnered considerable attention in the medium-voltage high-power areas like high-frequency solid-state transformers and multilevel converters. While direct series connection of these mosfet s is an option for higher voltage levels, it requires complex voltage balancing approaches for device voltage balancing during fast switching transients. Alternatively, converter-level solutions such as the three-level (3L) neutral-point-potential converter can be used. This article proposes a new modulation strategy, combining 3L, and Quasi-two-level modulations, to minimize the rating and volume of clamping diodes by tightly controlling the thermal stress on the diodes. This approach achieves better efficiency, higher power density, and a simpler converter bus-structure to stack two SiC mosfet s effectively in series. We present a real-time clamping diode loss estimation to improve the effectiveness of the proposed modulation strategy. To verify the proposed converter-level approach and modulation strategy, we test a 20 kV rated phase-leg with two 10 kV SiC mosfet s and 3.3 kV SiC diodes.

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关键词

diode volume reduction,converter,three-level,neutral-point-clamped,quasi-two-level

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