Enhanced intra/intermolecular charge transfer for efficient multilevel resistive memory
Applied Surface Science(2022)
摘要
A superior organic ternary write-once-read-many-times (WORM) memory was achieved by introducing alkynyl π bridges and tert-butyl substituent moieties onto the D-A-D molecular backbone, which enhance the field-induced intramolecular and intermolecular charge transfer (CT) effect, thereby contributing to the formation of the second conducting channel and realizing multilevel data storage.
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关键词
Organic resistive memory,WORM,Multilevel memory,CT,Logic gates
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