Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga₂O₃ with high hole mobility

Congcong Ma,Zhengyuan Wu,Zhuoxun Jiang,Ying Chen,Wei Ruan,Hao Zhang,Heyuan Zhu,Guoqi Zhang, Junyong Kang,Tong-Yi Zhang,Junhao Chu,Zhilai Fang

Journal of Materials Chemistry C（2022）

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摘要

Correction for ‘Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility’ by Congcong Ma et al., J. Mater. Chem. C, 2022, DOI: https://doi.org/10.1039/d1tc05324h.

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high hole mobility,conduction mechanisms,p-type,nitrogen-doped

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Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility

Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga₂O₃ with high hole mobility