Evolution Between Volatile and Nonvolatile Resistive Switching Behaviors in Ag/TiO X /ceo Y /F-Doped SnO2 Nanostructure-Based Memristor Devices for Information Processing Applications

Itis well known that higher requirements have been put forwardfor the computing efficiency and storage speed of the data processingof memory devices in the post Moore era. In particular, if a memorydevice with multiple physical characteristics can be developed, itwill play an important role in realizing multifunctional applicationsof electronic systems. Here, a nanoscale memristor device with a Ag/TiO x /CeO y /F-dopedSnO(2) structure was prepared, which shows many interestingphysical phenomena with the changing of the applied voltage. In thelow-voltage region (<1.5 V), the device presents a volatile property,while it presents a nonvolatile behavior when a higher voltage (>2V) was applied. Interestingly, the non-zero-crossing current-voltage(I-V) hysteresis behaviorcaused by the internal electromotive force appears in the voltageregion of 0.5-1 V. Furthermore, as the applied voltage increases,the device gradually displays ideal memristor behavior and exhibitsthe standard resistance switching characteristic accompanied by thenegative differential resistance effect in the region of 3.5-4.0V. Therefore, this nanoscale device with multiple physical propertiesopens up a promising way for understanding the emerging physical phenomena,and it will be expected to become a potential candidate for the nextgeneration of multifunctional electronic devices.