A Low Noise Bandgap Reference with 0.89 V Vref, 0.88 Vrms noise and 80 dB of PSRR

S. Sowmyashree,Hitesh Shrimali

2023 36TH INTERNATIONAL CONFERENCE ON VLSI DESIGN AND 2023 22ND INTERNATIONAL CONFERENCE ON EMBEDDED SYSTEMS, VLSID(2023)

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摘要
A low noise, all CMOS voltage reference is proposed and designed for defence applications. The proposed design uses a decoupling capacitor and chopper-stabilization-based-noise-cancellation technique. The design is supported with an extensive process, voltage and temperature (PVT) analysis in a standard 65 nm CMOS technology. The simulation results exhibit 0.89 V of V-ref with 13.03 ppm/degrees C temperature sensitivity. The design also shows a spot noise of 3.43 nV at 10 KHz, root mean square (RMS) noise (V-rms) of 1.07 mu V/root Hz for 10 Hz to 100 KHz and power supply rejection ratio (PSRR) of 72.83 dB, reported at various worst case PVT corners. At a typical PVT corner, the results show the spot noise of 2.78 nV at 10 KHz, V-rms noise of 0.88 mu V/root Hz for 10 Hz to 100 KHz and the PSRR of 80 dB. The paper also presents the mathematical closed-form noise equations for the proposed circuit. The equations show the mean percentage error (MPE) of 1%, 0.3% and 0.5% for the mean square output noise, the spot noise and the RMS noise respectively.
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关键词
Low noise, voltage reference, decoupling capacitor, chopper stabilization amplifier, PVT corners, spot noise, root mean square (RMS) noise, power supply rejection ratio (PSRR)
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