Ferroelectricity Based Memory Devices: New-Generation of Materials and Applications

The key challenges in developing non-volatile memories are to ensure their compatibility with CMOS processing and to minimize complexity. HfO 2 materials have many advantages over perovskite ferroelectric materials. The memory performance, fatigue characteristics, and leakage current of HfO 2 based on different doping materials have been investigated. The predominant dopants are Si Al Zr. The ferroelectric effect is notorious when the concentration of Si and Al doping is about 4%. When the content of Zr is 50%, Zr: HfO 2 in FeFET with its ferroelectric layer achieved a higher memory window, and the fatigue characteristics are at least 3 orders of magnitude higher than in other devices. Recent ferroelectric breakthroughs and prospective future-generation comparisons have been concluded, which are essential for the development of ferroelectric memory devices.