InGaN/GaN QWs on tetrahedral structures grown on graphene/SiC

In recent years, flexible nitride LEDs have been developed for applications in fields such as lighting, displays but also medicine and biology. Said nanowire-based flexible LEDs are made of InGaN/GaN core-shell nanowires encapsulated in a polymer matrix, which is peeled off and constitutes the final flexible LED structure. However, the current peel off process is complex and hardly compatible with industrial applications. One solution to this issue could be the Van Der Waals epitaxy of the LED structures on graphene, as this approach is known to ease the separation from the original substrate. However, to realize Van der Waals epitaxy and prevent nucleation of GaN on defects located within the graphene layer, the quality of the graphene needs to be optimized. In this work we employ graphene grown by Chemical Vapor Deposition on SiC, known to be notably less defective than graphene grown on metals or sapphire. In this work, tetrahedral structures of GaN have been grown on monolayer and multilayer graphene on SiC. X-Ray Diffraction measurements confirmed that the GaN followed the crystallographic directions of SiC, implying growth through remote-epitaxy mechanism thanks to the presence of graphene in both cases. Last, InGaN/GaN structures were realized by growth of a 5 period of InGaN/GaN quantum wells on these GaN tetrahedra. Cathodoluminescence as well as photoluminescence measurements revealed the presence of stacking faults and Zinc Blende inclusion, as well as a broad visible emission near 480 nm of quantum wells.