Van der Waals Ferroelectrics: Theories, Materials, and Device Applications

Advanced materials (Deerfield Beach, Fla.)(2023)

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摘要
In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due to their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed. First, theories of ferroelectricity are briefly discussed. Then, a comprehensive summary of the non-stacking vdW ferroelectric materials is provided based on their crystal structures and the emerging sliding ferroelectrics. In addition, their potential applications in various branches/frontier fields are enumerated, with a focus on artificial intelligence. Finally, the challenges and development prospects of vdW ferroelectrics are discussed. 2D vdW ferroelectric materials reveal great potential applications in electronics, optoelectronics, and spintronics, owing to robust spontaneous polarization, widespread bandgap tunability, inert surfaces, and silicon-based technology compatibility. This review covers their recent advances in ferroelectricity origin and practical applications, especially in artificial intelligence. The hot topic of sliding ferroelectrics in physical origins and novel properties is also focused on.image
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关键词
artificial neuron network,in-memory computing,sliding ferroelectrics,space-inversion symmetry breaking,Van der Waals ferroelectrics
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