Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

The single event effect of a silicon-germanium heterojunction bipolar transistor(SiGe HBT)was thoroughly investi-gated.By considering the worst bias condition,the sensitive area of the proposed device was scanned with a pulsed laser.With variation of the collector bias and pulsed laser incident energy,the single event transient of the SiGe HBT was studied.Moreover,the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm.Finally,the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations,and a good consistency between the experimental data and the simulated outcomes was attained.