Low-temperature electrical transport and tunable optical properties of Mo-doped V2O3 thin films

This work reports the structural and low-temperature electrical transport properties of Mo doped V2O3 single-layer thin films (i.e., with compositions between Mo and V2O3 [V2−xMoxO3−δ (x = 0, 0.05–0.1)]) deposited on alumina (Al2O3) substrates by sol–gel dip-coating technique. The crystallinity of the V2O3 films is modified with the high concentration of Mo doping and exhibits a relatively defective structure compared to that of pure V2O3 films. The low temperature (i.e., over a temperature range of 253.15 to 273.15 K) electrical hysteresis curves reveal that the triggering of metal–insulator transition at low temperatures. The metal–insulator transition (MIT) temperature (Tc) values are found to be 258.49 and 261.11 K for 8 and 10 mol% Mo doped V2O3 films, respectively, which are higher than that of undoped V2O3 (Tc = 253.09 K). The experimental results contribute a promising method to develop a novel material for high-performance low-temperature engineering applications.