Study on temperature-dependent growth characteristics of germanium oxide film by plasma-enhanced atomic layer deposition

Donghyuk Shin,Heungsoo Park,So Young Kim,Dae-Hong Ko

Thin Solid Films（2023）

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摘要

•GeOx films are grown by plasma-enhanced atomic layer deposition (PE-ALD).•Increase in monoxide bond was observed for PE-ALD GeOx film grown at 250 °C.•GeOx at 250 °C exhibits high refractive index of 1.73 compared to typical value of 1.63.•GeOx in this study shows high density of ∼ 3.5 g/cm3 with low etch rate in water.

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关键词

germanium oxide film,atomic layer deposition,temperature-dependent,plasma-enhanced

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