Growth and pre-cooling doping of semiconducting C-doped hBN as a sensitive thermistor

Materials Letters（2023）

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摘要

•The growth and quality of hBN on nickel can be controlled by the V/III ratio of NH3 and B2H6.•Carbon doping by CH4 is possible before cooling instead of mixing it with process gasses during the growth step.•C-doped hBN is a high-resistance semiconductor with sub-bandgap in a visible light.•C-doped hBN is a sensitive thermistor better than graphene.

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关键词

hbn,pre-cooling,c-doped

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