Role of inserting an InGaN strain release interlayer in AlGaN growth

Zhenzhuo Zhang,Jing Yang,Feng Liang,Yufei Hou,Zongshun Liu,Degang Zhao

Results in Physics（2023）

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摘要

•Crack-free and thicker AlGaN film with higher Al composition can be grown by inserting InGaN layer.•InGaN interlayer modulates the stress through asymmetric temperature varying process.•InGaN interlayer also introduces V-pits, which may be able to relieve stress similar to ELOG.

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关键词

AlGaN growth, MOCVD, Stress modulation, InGaN interlayer

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