R2D2 – An equivalent-circuit model that quantitatively describes domain wall conductivity in ferroelectric LiNbO_3
arXiv (Cornell University)(2023)
摘要
Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two
separate mechanisms: (a) the injection/ejection of charge carriers across the
Schottky barrier formed at the (metal-) electrode-DW junction and (b) the
transport of those charge carriers along the DW. Current-voltage (IU)
characteristics, recorded at variable temperatures from LiNbO_3 (LNO) DWs,
are clearly able to differentiate between these two contributions. Practically,
they allow us here to directly quantify the physical parameters relevant for
the two mechanisms (a) and (b) mentioned above. These are, e.g., the resistance
of the DW, the saturation current, the ideality factor, and the Schottky
barrier height of the electrode/DW junction. Furthermore, the activation
energies needed to initiate the thermally-activated electronic transport along
the DWs, can be extracted. In addition, we show that electronic transport along
LiNbO_3 DWs can be elegantly viewed and interpreted in an adapted
semiconductor picture based on a double-diode/double-resistor equivalent
circuit model, the R2D2 model. Finally, our R2D2 model was checked for its
universality by fitting the DWC data not only to z-cut LNO bulk DWs, but
equally to z-cut thin-film LNO DWs, and DWC from x-cut DWs as reported in
literature.
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关键词
wall conductivity,equivalent-circuit
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