Threshold Modulative Artificial GABAergic Nociceptor.

Advanced materials (Deerfield Beach, Fla.)(2023)

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摘要
Gamma-aminobutyric acid (GABA) is a crucial inhibitory neurotransmitter of the central nervous system. It modifies the signal threshold of the nociceptor, allowing it to react to external stimuli in various circumstances. Thus, GABAergic behaviors are critical characteristics of the adaptive behavior in life. Here, we report a threshold-modulative artificial GABAergic nociceptor for the first time at a Pt/Ti/Nb O /Al O /Pt/Ti (top to bottom) of the double charge trapping structure. The Al O layer contains deep defect states that function similarly to the GABA neurotransmitter in modulating the signal threshold. Meanwhile, the Nb O layer traps volatile charges and produces nociceptive behaviors. The combined dynamics of the two layers readily offer threshold-modulative GABAergic nociceptive behaviors. Based on these GABAergic behaviors, we demonstrate a method of implementing hot- and cold-sensitive thermoreceptors and show its potential applications in advanced sensory devices. This article is protected by copyright. All rights reserved.
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关键词
Charge trapping, GABAergic, Memristors, Nociceptors, Threshold
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