Observation of comet-shaped defect as killer defect in halide vapor phase epitaxial (001) -Ga2O3 and its impact on Schottky barrier diodes
JAPANESE JOURNAL OF APPLIED PHYSICS(2023)
摘要
We observed killer defects that served as reverse leakage current paths for halide vapor phase epitaxial (001) & beta;-Ga2O3 Schottky barrier diodes, which resulted in a leakage current of -0.46 & mu;A at reverse bias of -100 V. Synchrotron X-ray topography revealed comet-shaped contrasts extending along [010] which are induced from the strain field surrounding the defects. They consisted of perfect (100)-cracks and horizontal-oriented (001) cracks. The cross-sectional scanning transmission electron microscopy observation showed (100)-cracks on the surface and dislocations along [100] beneath the surface. This defect was speculated to be generated from damage during the chemical-mechanical polishing.
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关键词
crystal defect, reverse leakage current, Schottky barrier diode, emission microscopy
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