1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission

We present the comprehensive study of laser performance of 1300 nm wafer -fused vertical-cavity surface-emitting lasers. Lasers with 5 mu m buried tunnel junction diameter demonstrate a stable single mode operation in the wide temperature range with maximal output optical power of 6 mW and above 1.5 mW at 20 degrees C and 80 degrees C respectively. Based on small -signal analysis the maximal modulation frequency of 8 GHz at 20 degrees C was estimated. Further increase of the temperature up to 85 degrees C led to dropping of maximal small-signal modulation frequency down to similar to 6 GHz at-3dB level despite of remaining of rather high current modulation efficiency about similar to 2.7 GHz/mA(0.5).