Low-loss through silicon Vias (TSVs) for RF system 3D integration

The TSV adapter board in a micro -system based on TSV technology is studied and a transmission structure was proposed which was stacked by three layers of silicon-based packaging. The electromagnetic model of the transmission structure is established and the simulation analysis is carried out. The result shows that the insertion loss (IL) of the transmission structure is below -0.37 dB and the return loss (RL) is better than -20 dB when f <= 18 GHz. It is shown that the developed 3D interconnects have the advantages of low loss and high isolation, which can be widely applied for silicon-based 3D integrated electronic systems.