Photoluminescence and outstanding transparent in Er 3+ -doped (K 0.5 Na 0.5 )NbO 3 -(Sr 0.5 Ba 0.5 )(Bi 0.5 Nb 0.5 )O 3 ceramics

The rapid development of electronic information technology has given optoelectronic ceramics a new mission, which is high performance and versatility. Er 3+ -doped 0.94(K 0.5 Na 0.5 )NbO 3 -0.06(Sr 0.5 Ba 0.5 )(Bi 0.5 Nb 0.5 )O 3 ceramics were prepared by conventional solid-phase methods. At x = 0.2, the ceramic obtains a high transmittance of 80.14% in the near-infrared region (1100 nm) due to the high structural symmetry, dense microstructure, and large optical band gap energy ( E g ). The up-conversion photoluminescence (UCPL) spectrum shows the high emission intensity obtained at x = 0.4, revealing the outstanding luminescence properties of the ceramic. The dense microstructure and small grains give the ceramics high dielectric breakdown strength (DBS). Thus, at x = 0.2, the ceramic obtains excellent comprehensive electrical properties with W rec and η of 1.25 J/cm 3 and 58.56%, respectively. This ceramic is highly attractive for high-performance and multi-functional optoelectronic ceramic devices.