Properties of Image Sensor Structure Obtained Below 120°C On The Foil By Reactive Magnetron Sputtering

Polyimide substrates are of interest because of their thermal stability, light weight, and good mechanical characteristics. This paper reports thermal control multilayer deposition experiments which have strongly affected the properties of the image sensor structure (TFT + photodiode). Particularly TFT properties have been studied with respect to difficulties of obtaining of good quality a-SiN x :H films at temperature below 120°C. We characterize the structural properties using infrared absorption, refractive index measurements, small angle x-ray diffraction and the optoelectrical measurements of the TFT and PIN diode structure. The linear image sensor consisting of two rows, 40 pixels per row, with dimensions 0.6 mm 2 was made on the polyimide foil.