Mg2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability

We present the results of a simulation study of Mg2Si heterojunction-based SOI TFETs using TCAD. Mg2Si is used as low-bandgap material for the source to achieve high on-current. The proposed structure enhances the tunneling rate that improves current conduction and subthreshold swing considerably. The on-current (ION), off-current (IOFF), and subthreshold swing were found to be 1.089 × 10−5A/μm, 8.632 × 10−17A/μm, 1.26 × 1011, and 27 mV/decade, respectively. Further, a systematic study for the physical interpretation of electron Fermi potential, DC, and analog/RF performance has also been carried out. The proposed device follows the ITRS roadmap for low power switching performance.