Structure and luminescence properties of Eu3+ and Dy3+ implanted GaN films

X-Ray diffraction (XRD), Raman scattering, Cathodoluminescence measurements (CL) and Photoluminescence (PL) were employed to characterize the structure and optical properties of Dysprosium (Dy) and Europium (Eu) implanted GaN films grown by MOCVD. For GaN: Dy3+ samples, Dy3+ implantation leads to strain and radiation damage increasing with Dy3+ implanted fluence. From the CL spectra, the characteristic transitions from the excited 4F9/2 level of Dy3+ to 6H15/2 (485 nm), 6H13/2 (583 nm) and 6H11/2 (671 nm) were observed. For Dy3+ and Eu3+ co-doped GaN, considering the doping effects of Dy3+, we proposed that there might exist a resonance energy transfer process from Eu3+ ions 7F0→5D2 to Dy3+ ions 4F9/2 → 6H15/2, which is dominated by the electric dipole-dipole interaction.