Photoluminescence characteristic of as-grown and thermally annealed n- and p-type modulation-doped Ga0.68In0.32NxAs1-x/GaAs quantum well structures

Omer Donmez,Fahrettin Sarcan,Ayse Erol,Fatih Ungan,Hüseyin Sarı

Thin Solid Films（2021）

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摘要

•Silicon doping suppresses the S-shape characteristic•Optical transitions are identified by comparing the finite element method•Post growth rapid thermal annealing enhances luminescence efficiency•Rapid thermal annealing eliminate the localized state in beryllium doped samples

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关键词

Dilute nitride,Finite element method,Rapid thermal annealing,Band anti-crossing,Schrödinger-Poisson equation

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