Theory of polarized photoluminescence of indirect band gap excitons in type-I quantum dots

In this paper, we theoretically investigate the optical orientation and alignment of excitons in quantum dots with weak electron-hole exchange interaction and long exciton radiative lifetimes. This particular regime is realized in semiconductor heterosystems where excitons are indirect in the r ork space. The main role in the fine structure of excitonic levels in these systems is played by the hyperfine interaction of the electron in the confined exciton and fluctuations of the Overhauser field. Along with it, the effects of nonradiative recombination and exchange interaction are considered. We start with the model of vanishing exchange interaction and nonradiative exciton recombination and then take them into consideration in addition to the strong Overhauser field. In the nano-objects under study, the polarization properties of the resonant photoluminescence are shown to vary with the external magnetic field in a completely different way as compared with the behavior of conventional quantum dot structures.