Subsonic steady-states for bipolar hydrodynamic model for semiconductors

In this paper, we study the well-posedness, ill-posedness and uniqueness of the stationary 3-D radial solution to the bipolar isothermal hydrodynamic model for semiconductors. The density of electron is imposed with sonic boundary and interiorly subsonic case and the density of hole is fully subsonic case. It is difficult to estimate the upper and lower bounds of the holes due to the coupling of electrons and holes and the degeneracy of electrons at the boundary. Thus, we use the topological degree method to prove the well-posedness of solution. We prove the ill-posedness of subsonic solution under some conditions by direct mathematical analysis and contradiction method. The ill-posedness property shows significant difference to the unipolar model. Another highlight of this paper is the application of specific energy method to obtain the uniqueness of solution in two cases. One case is the relaxation time tau = infinity, namely, the pure Euler -Poisson case; the other case is (j)/(tau) << 1, which means that, when the current flow is sufficiently small and the relaxation time is sufficiently large both can satisfy.