Insight into the High Mobility and Stability of In₂O₃:H Film

Wide bandgap semiconductors, particularly In2O3:Sn (ITO), are widely used as transparent conductive electrodes in optoelectronic devices. Nevertheless, due to the strohave beenng scattering probability of high-concentration oxygen vacancy (V-O) defects, the mobility of ITO is always lower than 40 cm(2) V-1 s(-1). Recently, hydrogen-doped In2O3(In2O3:H) films have been proven to have high mobility (>100 cm(2) V-1 s(-1)), but the origin of this high mobility is still unclear. Herein, a high-resolution electron microscope and theoretical calculations are employed to investigate the atomic-scale mechanisms behind the high carrier mobility in In2O3:H films. It is found that V-O can cause strong lattice distortion and large carrier scattering probability, resulting in low carrier mobility. Furthermore, hydrogen doping can simultaneously reduce the concentration of V-O , which accounts for high carrier mobility. The thermal stability and acid-base corrosion mechanism of the In2O3:H film are investigated and found that hydrogen overflows from the film at high temperatures (>250 degrees C), while acidic or alkaline environments can cause damage to the In(2)O(3)grains themselves. Overall, this work provides insights into the essential reasons for high carrier mobility in In2O3:H and presents a new research approach to the doping and stability mechanisms of transparent conductive oxides.