Drag of Electron-Hole Bilayer in Silicon-on-Insulator at Low Temperature

The phenomenon of drag in the electron-hole bilayer in silicon-on-insulators (SOI) films is investigated at 10 K. The hole drag resistance against the electron drive current shows weaker dependence on the layer distance than that of the standard Fermi-liquid theory of the Coulomb drag in the ballistic limit This suggests the importance of the interface disorder for the mutual interaction between the electron and hole layers in the SOI films.