Preparation and Laser-Induced Thermoelectric Voltage Effect of Bi₂Sr₂Co₂O_y Thin Films Grown on Al₂O₃ (0001) Substrate

Bi2Sr2Co2Oy thin films were grown on 10 & DEG; vicinal-cut Al2O3 (0001) single crystalline substrates by pulsed laser-deposition techniques with in situ annealing, post-annealing and non-annealing process, respectively. The pure phase Bi2Sr2Co2Oy thin film was obtained with a non-annealing process. The result of X-ray diffraction showed that Bi2Sr2Co2Oy thin film was obviously c-axis preferred orientation. The laser-induced thermoelectric voltage signals were detected in Bi2Sr2Co2Oy thin films, which originated from the anisotropy of the Seebeck coefficient. The maximum peak value of laser-induced thermoelectric voltage was strong and could reach as large as 0.44 V and the response time was 1.07 & mu;s when the deposition time was 6 min. Furthermore, the peak voltage enhanced linearly with the single-pulse laser energy. These characteristics demonstrate that Bi2Sr2Co2Oy thin film is also an excellent choice for laser energy/power detectors.