Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing

2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM(2023)

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摘要
Utilizing the thermal noise-induced dipole fluctuation in ferroelectric material (FE), we propose the probabilistic-bits (p-bits) based on a single ferroelectric FET (FeFET) and verify its functions in integer factorization (IF), a stochastic computing application. By accounting the thermal noise in multi-domain time-dependent Landau-Ginzburg (TDLG) equations, we investigate the impact of several key FE parameters in stochastic behaviors. We further reveal the domain dynamics' crucial role in FE stochasticity and provide unique insights for the realization of FE-based p-bits.
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关键词
domain dynamics,ferroelectric field effect transistors,ferroelectric probabilistic bits,integer factorization,multidomain time-dependent Landau-Ginzburg equations,stochastic computing,thermal noise-induced dipole fluctuation
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