Selective Area Carrier Concentration Modulation of Single Crystal ?-Ga₂O₃ film Through High Temperature Oxygen Annealing Process

In this work, we demonstrate that high-temperature oxygen annealing, a unique and low-cost process, can be used to selectively modulate the carrier concentration of ss-Ga2O3 film. The design rules of the main process steps are explored in conjunction with the electrical characterization results. In addition, further optimization of the process technology is also discussed. This research broadens the device manufacturing method and will further extend the cost advantage of the ss-Ga2O3 device.