Self-Powered Ultraviolet-Visible Transparent Photodetector Based on Mo-Doped BiVO4 Thin Films

Till now, BiVO4 has been extensively investigatedforphotoelectrochemical cell applications; however, the efficacy of BiVO4 in the photodetector (PD) and photovoltaic field is stillchallenging due to its poor absorption ability, conductivity, andhigh recombination rate. Keeping these issues in mind, herein, wereport a co-sputtered Mo-doped (Mo:BiVO4) thin films-basedself-powered ultraviolet (UV)-visible transparent PD (TPD)with a high photo-to-dark current ratio value of 1.2 x 10(3) and a detectivity value of 4.1 x 10(10) Jones.Mo:BiVO4-based self-powered TPD devices show a fast responsespeed with a value of 3.5 ms. Moreover, the fabricated TPD devicesshow a clear photovoltaic photoresponse with an average visible transparencyvalue of 65%. The highest obtained open-circuit voltage value is about300 mV with a short-circuit current density value of 2.53 mA/cm(2) under visible illumination along with an onsite power productionvalue of 44 & mu;W. Developed Mo:BiVO4-based TPD devicesexplore the suitability of BiVO4 in the transparent optoelectronicsand onsite power generation field for the future.