Numerical simulation study on the photovoltaic performance of tin-based perovskite solar cell using CuSCN as a hole transport layer giving 32% theoretical efficiency

In this work, an n-i-p perovskite solar cell structure comprising a lead-free methyl ammonium iodide (CH 3 NH 3 SnI 3 ) as an absorber layer and Cuprous Tricynate (CuSCN) as a hole transport material is numerically modeled and simulated using SCAPS-1D software. Influence of various material parameters such as doping concentration of the absorber layer, thickness of the different layers, effect of different back contacts, defects in the absorber layer etc., is studied as a function of cell parameters, i.e., fill factor (FF), the open circuit voltage (V oc ), the short circuit current density (J sc ), and the power conversion efficiency (PCE) to explore the photovoltaic performance of the designed solar cell structure. Upon optimization of the different material parameters, the modelled solar cell has resulted in enhanced photovoltaic performance with V oc ~ 1.08 V, J sc = 33.78 mA/cm 2 , FF = 87.42% and PCE = 32.00%.