The Random Coupling Model – Introduction and Applications Overview

The Random Coupling Model (RCM) is a method for making statistical predictions of induced voltages and currents for objects and components contained in complicated (ray-chaotic) over-moded enclosures and subjected to RF fields. It uses minimal information about the enclosures, allowing one to make fast and efficient probabilistic predictions for the relevant EMC-related quantities. It is based on simple universal predictions of wave chaos theory and is quantitatively supported by random matrix theory. The system-specific (non-universal) aspects of the problem are quantified by means of the radiation impedance of the “ports“ involved in the problem, as well as prominent short orbits. A dimensionless loss parameter, given by the ratio of a typical mode 3-dB bandwidth to the mean spacing between modes, characterizes the fluctuations of the enclosure impedance. The outcome is a prediction for the statistics of scattering properties, impedance, S-matrix, and induced voltages on ports inside the enclosure. The RCM has been tested in many contexts in one-, two-, and three-dimensional enclosures, in both the frequency and time domains, and for both linear and nonlinear ports. We present an overview of the model and illustrate it use through a series of experimental results that have been used to verify the model and take it into new directions.