GeSn Defects and their Impact on Optoelectronic Properties: A Review
arxiv(2023)
Abstract
GeSn has emerged as a promising semiconductor with optoelectronic
functionality in the mid-infrared, with the potential of replacing expensive
III-V technology for monolithic on-chip Si photonics. Multiple challenges to
achieve optoelectronic-grade GeSn have been successfully solved in the last
decade. We stand today on the brink of a potential revolution in which GeSn
could be used in many optoelectronic applications such as Light Detection and
Ranging (LiDARs) devices and lasers. However, the limited understanding and
control of material defects represents today a bottleneck in the performance of
GeSn-based devices, hindering their commercialisation. Point and linear defects
in GeSn have a strong impact on its electronic properties, namely unintentional
doping concentration, carrier lifetime and mobility, which ultimately determine
the performance of optoelectronic devices. In this review, after introducing
the state-of-the-art of the fabrication and properties of GeSn, we provide a
comprehensive overview of the current understanding of GeSn defects and their
influence on the material (opto)electronic properties. Throughout the
manuscript, we highlight the critical points that are still to solve. By
bringing together the different fabrication techniques available and
characterizations realized we provide a wholistic view on the field of GeSn and
provide elements on how it could move forward.
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