Diamond Metal-Oxide-Semiconductor Field-Effect Transistors on a Large-Area Wafer

Diamond-based devices are suitable for high-power, low power-loss, high-frequency, and high-temperature applications. Most of diamond-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated on small-size diamond wafers $(3 \times 3\ \text{mm}^{2})$ . In order to promote the diamond-based devices for future applications, it is necessary to investigate the electrical properties of them on the large-area wafers. Here, we fabricate hydrogen-terminated diamond MOSFETs on a large-area wafer $(8\times 8\ \text{mm}^{2})$ with a quantity of 720. Electrical properties of them are investigated and discussed.